絲?。?a target="_blank" title="Marking" href="/6207/marking.html">6207；12V, 4.0 mΩ, 8.5A, Dual N-Channel

Feature ?Rss(on) Max = 5.0mΩ(VGS=4.5V) ?2KV ESD HBM ?Common-Drain Type ?ESD Protected Gate ?Pb-Free, Halogen-Free & RoHS Compliance Application ?Lithium Ion Battery

文件：1.4166 Mbytes 頁(yè)數(shù)：6 Pages

FS

MOS FET:CSP

First Silicon

Low dropout high ripple rejection CMOS voltage regulator

文件：1.05475 Mbytes 頁(yè)數(shù)：11 Pages

HMSEMI

華之美半導(dǎo)體

256 k High Speed SRAM (256-kword x 1-bit)

Features · Single 5 V supply and high density 24-pin package · High speed Access time: 25/35/45 ns (max) · Low power ? Operation: 300 mW (typ) ? Standby: 100 μW (typ) 30 μW (typ) (L-version) · Completely static memory required, no clock or timing strobe required · Equal access and

文件：114.25 Kbytes 頁(yè)數(shù)：11 Pages

HITACHIHitachi Semiconductor

日立日立公司

318 Series of Encoders

General Description The 318 decoders are a series of CMOS LSIs for remote control system applications. They are paired with the 318 series of encoders. For proper operation a pair of encoder/decoder pair with the same number of address and data format should be selected (refer to the enco

文件：130.449 Kbytes 頁(yè)數(shù)：11 Pages

HOLTEK

合泰