4 Amps, 650 Volt N-CHANNEL POWER MOSFET

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FS

MOS FET:High Voltage

First Silicon

650V N-Channel MOSFET

FEATURES ? Originative New Design ? Superior Avalanche Rugged Technology ? Robust Gate Oxide Technology ? Very Low Intrinsic Capacitances ? Excellent Switching Characteristics ? Unrivalled Gate Charge : 15 nC (Typ.) ? Extended Safe Operating Area ? Lower RDS(ON) : 2.3 Ω (Typ.) @VGS=10V ?

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SEMIHOW

N-Channel Enhancement Mode Field Effect Transistor

General Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy

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HUASHAN

華汕電子器件

650V N-Channel MOSFET

Features ? Originative New Design ? Very Low Intrinsic Capacitances ? Excellent Switching Characteristics ? 100 Avalanche Tested ? RoHS Compliant

文件：265.52 Kbytes 頁數(shù)：9 Pages

SEMIHOW