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          首頁 >FTD1781K>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          FTD1781K

          Medium Power Transistor

          Features 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon tran

          文件:109.68 Kbytes 頁數(shù):4 Pages

          FS

          FTD1781KQLT1G

          絲?。?a target="_blank" title="Marking" href="/afq/marking.html">AFQ;Package:sot-23;Medium Power Transistor

          Features 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon tran

          文件:109.68 Kbytes 頁數(shù):4 Pages

          FS

          FTD1781KQLT3G

          絲?。?a target="_blank" title="Marking" href="/afq/marking.html">AFQ;Package:sot-23;Medium Power Transistor

          Features 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon tran

          文件:109.68 Kbytes 頁數(shù):4 Pages

          FS

          FTD1781KRLT1G

          絲?。?a target="_blank" title="Marking" href="/afr/marking.html">AFR;Package:sot-23;Medium Power Transistor

          Features 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon tran

          文件:109.68 Kbytes 頁數(shù):4 Pages

          FS

          FTD1781KRLT3G

          絲印:AFR;Package:sot-23;Medium Power Transistor

          Features 1) Very low VCE(sat). VCE(sat) 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the FTB1197K 4) We declare that the material of product compliance with RoHS requirements. Structure Epitaxial planar type NPN silicon tran

          文件:109.68 Kbytes 頁數(shù):4 Pages

          FS

          FTD1781K

          TRANSISTOR:Genreal Purpuse

          First Silicon

          技術參數(shù)

          • PC:

            200

          • IC:

            800

          • VCBO:

            40

          • VCEO:

            32

          • VCE(SAT):

            0.4

          • HFE(min):

            120

          • HFE(max):

            390

          • FT:

            150

          • Package:

            SOT-23

          供應商型號品牌批號封裝庫存備注價格
          NK/南科功率
          2025+
          SOT-89
          986966
          國產(chǎn)
          詢價
          SANYO/三洋
          22+
          TSSOP8
          25000
          只有原裝絕對原裝,支持BOM配單!
          詢價
          VB
          2026+
          TSSOP8
          18985
          原裝正品,假一罰十!
          詢價
          S
          20+
          TSSOP8
          2960
          誠信交易大量庫存現(xiàn)貨
          詢價
          SANYO
          25+
          TSSOP-8
          32500
          普通
          詢價
          SANYO
          24+
          SOP-8
          1562
          詢價
          SANYO
          23+
          SOP8
          5000
          原裝正品,假一罰十
          詢價
          SANYO
          25+
          SOP-8
          18000
          原廠直接發(fā)貨進口原裝
          詢價
          SANYO
          2023+
          SOP-8
          50000
          原裝現(xiàn)貨
          詢價
          SANYO
          17+
          TSSOP8
          6200
          100%原裝正品現(xiàn)貨
          詢價
          更多FTD1781K供應商 更新時間2026-1-21 14:01:00
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