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                >FSTJ9055D3>規(guī)格書列表
                
    
            
    
                
    
                    
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    FSTJ9055D3
    Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
    
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite
    文件：72.59 Kbytes 頁(yè)數(shù)：8 Pages
    INTERSIL
    

    FSTYC9055D3
    Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
    
The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite
    文件：74.86 Kbytes 頁(yè)數(shù)：8 Pages
    INTERSIL
    

    FSYC9055D3
    Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
    
Description
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
    文件：51.81 Kbytes 頁(yè)數(shù)：8 Pages
    INTERSIL
    

    FSJ9055D3
    55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
    
Description
The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul
    文件：66.24 Kbytes 頁(yè)數(shù)：8 Pages
    INTERSIL
    

    
            
    
		
        
    
            
    
                
    詳細(xì)參數(shù)
    
            
    
            
      
            	
    • 型號(hào)：
      FSTJ9055D3
    • 制造商：
      INTERSIL 
    • 制造商全稱：
      Intersil Corporation 
    • 功能描述：
      Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 
    
            
    
        
    
            
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