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          首頁(yè) >FSS430D>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          FSS430D

          3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:46.38 Kbytes 頁(yè)數(shù):8 Pages

          INTERSIL

          FSS430D1

          3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:46.38 Kbytes 頁(yè)數(shù):8 Pages

          INTERSIL

          FSS430D3

          3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:46.38 Kbytes 頁(yè)數(shù):8 Pages

          INTERSIL

          FSS430D

          3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

          Renesas

          瑞薩

          詳細(xì)參數(shù)

          • 型號(hào):

            FSS430D

          • 制造商:

            INTERSIL

          • 制造商全稱:

            Intersil Corporation

          • 功能描述:

            3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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          更多FSS430D供應(yīng)商 更新時(shí)間2026-1-18 16:30:00
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