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首頁 >FSS2>規(guī)格書列表

型號	下載訂購	功能描述	制造商上傳企業(yè)	LOGO
FSS234R4	文件：45.39 Kbytes Page：8 Pages	6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件：45.39 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS238	文件：72.33 Kbytes Page：4 Pages	Load Switching Applications Features ? Low ON resistance. ? 4V drive. 文件：72.33 Kbytes 頁數(shù)：4 Pages	SANYO 三洋	SANYO
FSS239	文件：28.35 Kbytes Page：4 Pages	Load Switching Applications Features ? Low ON resistance. ? 2.5V drive. 文件：28.35 Kbytes 頁數(shù)：4 Pages	SANYO 三洋	SANYO
FSS23A0D	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0D1	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0D3	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0R	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0R1	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0R3	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL
FSS23A0R4	文件：56.72 Kbytes Page：8 Pages	9A, 200V, 0.330 Ohm, Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件：56.72 Kbytes 頁數(shù)：8 Pages	INTERSIL	INTERSIL

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產(chǎn)品屬性

產(chǎn)品編號：
FSS2
制造商：
Carlo Gavazzi Inc.
類別：
傳感器，變送器 > 磁性傳感器 - 位置，接近，速度（模塊）
系列：
FS
包裝：
盒
類型：
開關(guān)
輸出類型：
NO/NC
端接樣式：
導(dǎo)線引線
電壓 - 供電：
230VAC
工作溫度：
-25°C ~ 75°C
封裝/外殼：
圓柱形，有螺紋
描述：
SEN PROX MAG CO

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價(jià)格
現(xiàn)代芯城（深圳）科技有限公司	FSS2		24+	N/A	73000	一級代理-主營優(yōu)勢-實(shí)惠價(jià)格-不悔選擇	詢價(jià)
深圳市一線半導(dǎo)體有限公司	FSS212	TOS	24+	3.9mm8	18	全新現(xiàn)貨	詢價(jià)
深圳市恒創(chuàng)達(dá)實(shí)業(yè)有限公司	FSS262-TL-E	SANYO	17+	SO8	6200	100%原裝正品現(xiàn)貨	詢價(jià)
深圳市毅創(chuàng)騰電子科技有限公司	FSS242-TL		23+	SOP/8	7000	絕對全新原裝!100%保質(zhì)量特價(jià)!請放心訂購!	詢價(jià)
深圳市福田區(qū)綠盛電子商行	FSS202-PM-TL	SANYO	2015+	SMD/DIP	19889	一級代理原裝現(xiàn)貨,特價(jià)熱賣!	詢價(jià)
深圳市益百分電子有限公司	FSS239-TL	SANYO	00+	SOP8	2600	全新原裝進(jìn)口自己庫存優(yōu)勢	詢價(jià)
芯有半導(dǎo)體（深圳）有限公司	FSS23A0R4	F	06+	原廠原裝	4293	只做全新原裝真實(shí)現(xiàn)貨供應(yīng)	詢價(jià)
深圳市福安甌科技有限公司	FSS202-FM-TL	N/A	25+	SOP8	1000	強(qiáng)調(diào)現(xiàn)貨,隨時(shí)查詢!	詢價(jià)
深圳市弘為電子有限公司	FSS212-TL		24+	SOP8	1068	原裝現(xiàn)貨假一罰十	詢價(jià)
深圳市豪邁興電子有限公司	FSS250-TL	SANYO	24+	SOP8	5645	公司原廠原裝現(xiàn)貨假一罰十!特價(jià)出售!強(qiáng)勢庫存!	詢價(jià)

更多FSS2供應(yīng)商更新時(shí)間2026-1-20 11:06:00

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