| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FSPYE234F | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：79.62 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：79.62 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：79.62 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | ||
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star 文件：79.62 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL | ||
DC / DC Converter Applications Features ? Low ON-resistance. ? 4.0V drive. ? Ultrahigh-speed switching. 文件：29.28 Kbytes 頁數(shù)：4 Pages | SANYO 三洋 | SANYO | ||
6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul 文件：45.39 Kbytes 頁數(shù)：8 Pages | INTERSIL | INTERSIL |
詳細參數(shù)
- 型號：
FSPYE234F
- 制造商：
INTERSIL
- 制造商全稱：
Intersil Corporation
- 功能描述：
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
FSC |
2016+ |
DIP8 |
3500 |
只做原裝,假一罰十,公司可開17%增值稅發(fā)票! |
詢價 | ||
FSC |
24+ |
DIP8 |
5000 |
只做原裝公司現(xiàn)貨 |
詢價 | ||
FAIRCHILD |
24+ |
DIP-8 |
66800 |
原廠授權(quán)一級代理,專注汽車、醫(yī)療、工業(yè)、新能源！ |
詢價 | ||
24+ |
DIP-8 |
6430 |
原裝現(xiàn)貨/歡迎來電咨詢 |
詢價 | |||
FSC |
24+ |
DIP8 |
65200 |
一級代理/放心采購 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
DIP8 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
DIP8 |
23+ |
FAIRCHILD |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
FAIRCILD |
22+ |
DIP-8 |
8000 |
原裝正品支持實單 |
詢價 | ||
DIP8 |
14+ |
FAIRCHILD |
47 |
一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價 | ||
FAIRCHILD/仙童 |
2026+ |
DIP-8 |
1176 |
原裝正品,假一罰十! |
詢價 |
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