| 型號(hào) | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FSL923A0D | 5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:57.56 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | |
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:57.56 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:57.56 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:57.56 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:56.74 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL | ||
7A, -200V, 0.650 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K 文件:56.74 Kbytes 頁數(shù):8 Pages | INTERSIL | INTERSIL |
詳細(xì)參數(shù)
- 型號(hào):
FSL923A0D
- 制造商:
INTERSIL
- 制造商全稱:
Intersil Corporation
- 功能描述:
5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
23+ |
原廠封裝 |
11888 |
專做原裝正品,假一罰百! |
詢價(jià) | |||
- |
23+ |
TO-262 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
IR |
22+ |
TO262 |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
29178 |
##公司主營品牌長期供應(yīng)100%原裝現(xiàn)貨可含稅提供技術(shù) |
詢價(jià) | |||
IR |
23+ |
TO262 |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
IR |
23+ |
TO262 |
7000 |
詢價(jià) | |||
IR新貨 |
25+ |
TO-262 |
50 |
原裝正品,假一罰十! |
詢價(jià) | ||
TOKO |
25+ |
SMD |
2650 |
原裝優(yōu)勢(shì)!絕對(duì)公司現(xiàn)貨 |
詢價(jià) | ||
TOKO |
26+ |
BGA |
86720 |
全新原裝正品價(jià)格最實(shí)惠 假一賠百 |
詢價(jià) | ||
TOKO |
0430+ |
SMD |
340 |
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力 |
詢價(jià) |
相關(guān)規(guī)格書
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相關(guān)庫存
更多- FSL923A0D3
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- FSL-APR-2
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- FSLF-190LB-K
- FSLF-S090JG
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- FSLH-S130C
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- FSLH-S220C
- FSLL-S240E
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- FSLM2520-100-J
- FSLM2520-101
- FSLM2520-101-J
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- FSLM2520-120-J
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- FSLM2520-121-J
- FSLM2520-150
- FSLM2520-150-J
- FSLM2520-151

