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          首頁(yè) >FSF9150D>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          FSF9150D

          22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.07 Kbytes 頁(yè)數(shù):8 Pages

          INTERSIL

          FSF9150D1

          22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.07 Kbytes 頁(yè)數(shù):8 Pages

          INTERSIL

          FSF9150D3

          22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

          Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

          文件:45.07 Kbytes 頁(yè)數(shù):8 Pages

          INTERSIL

          FSF9150D

          22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

          Renesas

          瑞薩

          詳細(xì)參數(shù)

          • 型號(hào):

            FSF9150D

          • 制造商:

            INTERSIL

          • 制造商全稱:

            Intersil Corporation

          • 功能描述:

            22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

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          更多FSF9150D供應(yīng)商 更新時(shí)間2026-1-19 10:55:00
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