Dual N-Channel Enhancement Mode Power MOSFET

文件：707.35 Kbytes 頁數(shù)：6 Pages

FORTUNE

富晶電子

One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET

文件：1.038609 Mbytes 頁數(shù)：13 Pages

FORTUNE

富晶電子

One Cell Lithium-ion/Polymer Battery Protection IC With Built-in MOSFET

文件：1.038609 Mbytes 頁數(shù)：13 Pages

FORTUNE

富晶電子

Dual N-Channel Enhancement Mode Power MOSFET

文件：765.33 Kbytes 頁數(shù)：6 Pages

FORTUNE

富晶電子

二合一單節(jié)電池保護(hù)芯片

The FS8820P battery protection IC is designed to protect lithium-ion/polymer battery from damage or degrading the lifetime due to overcharge, overdischarge, and/or overcurrent for one-cell lithium-ion/polymer battery powered systems, such as cellular phones. The ultra-small package and less requir ?With built-in N-MOSFET of low turn-on resistance.\n?Reduction in Board Size due to Miniature Package TSSOP-8.\n?Protection IC：\n?Ultra-Low Quiescent Current at 3μA (Vcc=3.9V).\n?Ultra-LowOverdischarge Current at 3μA (Vcc=2.0V).\n?Overcharge Protection Voltage 4.28V ± 25mV\n?Overdischarge Protection;

Fortune

富晶電子

鋰電池保護(hù)MOSFET

Advanced Power MOSFETs utilized advanced processing techniques to achieve low on-resistance, extremely efficient and cost-effective device best suited for lithium-ion Battery charging and discharging switch .\r\n The SOT-23-6 package is universally used for all commercial-industrial applications. ·Low on-resistance\r\n·RDS(ON) = 24 mΩ MAX. (VGS = 4.5V, ID = 6A)\r\n·RDS(ON) = 32 mΩ MAX. (VGS = 2.5V, ID = 5A)\r\n·ESD Rating: ≧2000V HBM;

Fortune

富晶電子

低壓MOS管

FOSAN

富信半導(dǎo)體