12.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

文件：299.82 Kbytes 頁數(shù)：2 Pages

THINKISEMI

思祁半導(dǎo)體

Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications ? Low drain-source ON-resistance: RDS (ON) = 0.36 ? (typ.) ? High forward transfer admittance: ?Yfs? = 7.0 S (typ.) ? Low leakage current: IDSS = 100 μA (VDS = 600 V) ? Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：180.05 Kbytes 頁數(shù)：6 Pages

TOSHIBA

東芝

N-Channel 650 V (D-S) MOSFET

文件：1.03494 Mbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=12A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.4Ω(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.3 Kbytes 頁數(shù)：2 Pages

ISC

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