23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness

文件：48.14 Kbytes 頁數：6 Pages

INTERSIL

23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

Description\nThe Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness rang ? 23A, 250V, RDS(on) = 0.130?\n? Second Generation Rad Hard MOSFET Results From New Design Concepts\n? Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)\n???????????? - Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si)\n???????????? - Performance Permits Limited Use to 3000KRAD(Si)\n? Gamma ;

Renesas

瑞薩

23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness

文件：48.14 Kbytes 頁數：6 Pages

INTERSIL

23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?. Total dose hardness is offered at 100KRAD(Si) and 1000KRAD(Si) with neutron hardness

文件：48.14 Kbytes 頁數：6 Pages

INTERSIL

isc N-Channel MOSFET Transistor

文件：49.19 Kbytes 頁數：2 Pages

ISC

無錫固電