400V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

文件：735.8 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ohm

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：735.34 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.4A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.59 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，QFET?，400 V，3.4 A，1.6 ?，IPAK

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?3.4A, 400V, RDS(on)= 1.6Ω（最大值）@VGS = 10 V, ID = 1.7A柵極電荷低（典型值：10nC）\n?低 Crss（典型值7pF）\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?100% avalanche tested;

ONSEMI

安森美半導(dǎo)體

N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ohm

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：735.34 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體