200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features ? 3.8A, 200V, RDS(on)= 1.2?@VGS= 10 V ? Low gate charge ( typical 4.8 nC) ? Low Crss ( typical 6.0 pF) ? Fast

文件：529.94 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.8A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.57 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

DC Motor Control and Class D Amplifier

Features · Fast switching · 100% avalanche tested · Improved dv/dt capability · RoHS Compliant Application · DC Motor Control and Class D Amplifier · Uninterruptible Power Supply (UPS) · Automotive

文件：3.18561 Mbytes 頁數(shù)：7 Pages

GOFORD

谷峰半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

文件：447.15 Kbytes 頁數(shù)：6 Pages

HMSEMI

華之美半導(dǎo)體

N-Channel Enhancement Mode Power MOSFET

文件：1.15949 Mbytes 頁數(shù)：7 Pages

HMSEMI

華之美半導(dǎo)體