| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
FQU2N90 | N-Channel QFET? MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件:1.29789 Mbytes 頁數(shù):9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
FQU2N90 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=1.7A@ TC=25℃ ·Drain Source Voltage -VDSS=900V(Min) ·Static Drain-Source On-Resistance -RDS(on) =7.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:331.04 Kbytes 頁數(shù):2 Pages | ISC 無錫固電 | ISC | |
FQU2N90 | 900V N-Channel MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av 文件:750.31 Kbytes 頁數(shù):9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
FQU2N90 | N-Channel QFET? MOSFET 900 V, 1.7 A, 7.2 廓 文件:1.29789 Mbytes 頁數(shù):9 Pages | FAIRCHILD 仙童半導(dǎo)體 | FAIRCHILD | |
FQU2N90 | N 溝道 QFET? MOSFET 900V,1.7A,7.2? 該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻,并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正(PFC)及照明燈電子鎮(zhèn)流器。 ?1.7A, 900V, RDS(on)= 7.2Ω(最大值)@VGS = 10 V, ID = 0.85A柵極電荷低(典型值:12nC)\n?低 Crss(典型值5.5pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn)\n?RoHS compliant; | ONSEMI 安森美半導(dǎo)體 | ONSEMI | |
Power MOSFET, N-Channel, QFET?, 900 V, 1.7 A, 7.2 ?, IPAK 該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻,并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正(PFC)及照明燈電子鎮(zhèn)流器。 ?1.7A, 900V, RDS(on)= 7.2Ω(最大值)@VGS = 10 V, ID = 0.85A柵極電荷低(典型值:12nC)\n?低 Crss(典型值5.5pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn)\n?RoHS compliant; | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
N 溝道 QFET? MOSFET 900V,1.7A,7.2? 該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻,并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正(PFC)及照明燈電子鎮(zhèn)流器。 ?1.7A, 900V, RDS(on)= 7.2Ω(最大值)@VGS = 10 V, ID = 0.85A柵極電荷低(典型值:12nC)\n?低 Crss(典型值5.5pF)\n?100% 經(jīng)過雪崩擊穿測試\n?符合 RoHS 標(biāo)準(zhǔn)\n?RoHS compliant; | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
技術(shù)參數(shù)
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- V(BR)DSS Min (V):
900
- VGS Max (V):
±30
- VGS(th) Max (V):
5
- ID Max (A):
1.7
- PD Max (W):
50
- RDS(on) Max @ VGS = 10 V(mΩ):
7200
- Qg Typ @ VGS = 10 V (nC):
12
- Ciss Typ (pF):
390
- Package Type:
IPAK-3/DPAK-3 STRAIGHT LEAD
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
仙童 |
06+ |
TO-251 |
5000 |
原裝 |
詢價 | ||
FAIRCHIL |
24+ |
TO-251 |
8866 |
詢價 | |||
FAIRCHILD/仙童 |
20+ |
TO-251 |
38900 |
原裝優(yōu)勢主營型號-可開原型號增稅票 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO251 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價 | ||
FAIRCHILD/仙童 |
2022+ |
TO-251 |
50000 |
原廠代理 終端免費(fèi)提供樣品 |
詢價 | ||
FAIRCHILD |
25+ |
TO-251 |
4500 |
全新原裝、誠信經(jīng)營、公司現(xiàn)貨銷售 |
詢價 | ||
FAIRCHILD/仙童 |
23+ |
TO-251 |
688888 |
原廠授權(quán)一級代理,專業(yè)海外優(yōu)勢訂貨,價格優(yōu)勢、品種 |
詢價 | ||
FAIRCHILD/仙童 |
22+ |
TO-251 |
100000 |
代理渠道/只做原裝/可含稅 |
詢價 | ||
ON |
2022+ |
IPAK-3 / DPAK-3 STRAIGHT LEAD |
38550 |
全新原裝 支持表配單 中國著名電子元器件獨(dú)立分銷 |
詢價 | ||
FAIRCHILD |
2023+環(huán)?,F(xiàn)貨 |
TO251 |
10 |
專注軍工、汽車、醫(yī)療、工業(yè)等方案配套一站式服務(wù) |
詢價 |
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