600V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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FAIRCHILD

仙童半導(dǎo)體

N-Channel QFET? MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor?’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high

文件：748.29 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

文件：979.34 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1.9A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：331.03 Kbytes 頁(yè)數(shù)：2 Pages

ISC

無(wú)錫固電

N-Channel QFET MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Corise Semiconductor?s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, an

文件：842.74 Kbytes 頁(yè)數(shù)：8 Pages

KERSEMI

600V N-Channel MOSFET

文件：863.86 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

文件：863.86 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

絲?。?strong>FQU2N60C；Package：I-PAK；N-Channel QFET? MOSFET 600 V, 1.9 A, 4.7 廓

Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high aval

文件：979.34 Kbytes 頁(yè)數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Low Gate Charge (Typ. 8.5 nC)

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：742.85 Kbytes 頁(yè)數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，QFET?，600 V，1.9 A，4.7 ?，IPAK

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來(lái)降低導(dǎo)通電阻，并提供卓越的開(kāi)關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開(kāi)關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?1.9A, 600V, RDS(on)= 4.7Ω（最大值）@VGS = 10 V, ID = 0.95A柵極電荷低（典型值：8.5nC)\n?低 Crss（典型值4.3pF)\n?100% 經(jīng)過(guò)雪崩擊穿測(cè)試\n?符合 RoHS 標(biāo)準(zhǔn)\n?RoHS compliant;

ONSEMI

安森美半導(dǎo)體