700V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=700V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

功率 MOSFET，N 溝道，QFET?，700 V，2.0 A，6.3 ?，TO-220F

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?2A, 700V, RDS(on)= 6.3Ω（最大值）@VGS = 10 V, ID = 1.0A柵極電荷低（典型值：9nC)\n?低 Crss（典型值5pF)\n?100% 經(jīng)過雪崩擊穿測(cè)試\"\n? 100% avalanche tested;

ONSEMI

安森美半導(dǎo)體

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件：304.9 Kbytes 頁(yè)數(shù)：5 Pages

GTM

勤益投資控股

700V N-Channel MOSFET

文件：854.99 Kbytes 頁(yè)數(shù)：8 Pages

SEMIHOW

N-Channel MOSFET uses advanced trench technology

文件：766.07 Kbytes 頁(yè)數(shù)：5 Pages

DOINGTER

杜因特