600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半導體

N-Channel QFET? MOSFET 600 V, 2 A, 4.7 Ω

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and hi

文件：1.42482 Mbytes 頁數：10 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =4.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

功率 MOSFET，N 溝道，QFET?，600 V，2 A，4.7 ?，TO-220F

該 N 溝道增強型功率 MOSFET 產品采用飛兆半導體的專有平面條形和 DMOS 技術生產。這種先進的 MOSFET 技術已專門定制用來降低導通電阻，并提供卓越的開關性能和較高的雪崩能量強度。這些器件適用于開關電源、有源功率因數校正（PFC）及照明燈電子鎮(zhèn)流器。 ?2A, 600V, RDS(on)= 4.7Ω（最大值）@VGS = 10 V, ID = 1A柵極電荷低（典型值：8.5nC)\n?低 Crss（典型值4.3pF)\n?100% 經過雪崩擊穿測試\"\n? 100% avalanche tested;

ONSEMI

安森美半導體