400V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：576.03 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，P 溝道，QFET?，-400 V，-2.0 A，6.5 ?，TO-220

這些 P 溝道增強(qiáng)型功率場(chǎng)效應(yīng)晶體管采用飛兆專有的平面條形 DMOS 技術(shù)生產(chǎn)。這一先進(jìn)技術(shù)是專為最大限度地降低導(dǎo)通電阻，提供卓越的開關(guān)性能，以及在雪崩擊穿和換相情況下承受高能量脈沖而開發(fā)的。這些器件非常適合基于互補(bǔ)半橋的電子燈鎮(zhèn)流器。 ?-2.0 A，-400 V，RDS(on) = 6.5 Ω（最大值），條件是 VGS = -10 V\n?低柵極電荷（典型值10 nC)\n?低 Crss（典型值6.5 pF)\n?快速開關(guān)\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?提高了 dv/dt 性能;

ONSEMI

安森美半導(dǎo)體

400V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

文件：570.76 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

400V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：715.08 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

400V P-Channel MOSFET

文件：1.48926 Mbytes 頁數(shù)：8 Pages

KERSEMI