400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：727.24 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1.8A@ TC=25℃ ·Drain Source Voltage -VDSS=400V(Min) ·Static Drain-Source On-Resistance -RDS(on) =5.8Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：302.21 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N 溝道 QFET? MOSFET

該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導體的專有平面條形和 DMOS 技術生產(chǎn)。 這種先進的 MOSFET 技術已專門定制用來降低導通電阻，并提供卓越的開關性能和較高的雪崩能量強度。 這些器件適用于開關電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?1.8 A、400 V、RDS(on) = 5.8 Ω（最大值）@ VGS = 10 V、ID = 0.9 A?\n?低柵極電荷（典型值 4.0 nC)\n?低 Crss（典型值 3.0 pF)\n?快速開關\n?100% 經(jīng)過雪崩擊穿測試\n?提高了 dv/dt 性能;

ONSEMI

安森美半導體

400V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

文件：728.35 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

400V N-Channel MOSFET

文件：736.13 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=1.7A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.7Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：330.58 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電