250V P-Channel MOSFET

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FAIRCHILD

仙童半導(dǎo)體

MOSFET P-CH 250V 3.1A DPAK

ONSEMI

安森美半導(dǎo)體

P 溝道，QFET? MOSFET，-250V，-3.1A，2.1?

該 P 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體?的專有平面條形和 DMOS 技術(shù)生產(chǎn)。 這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。 這些設(shè)備適用于開關(guān)模式電源、音頻放大器、直流電機(jī)控制和可變開關(guān)電源應(yīng)用。 ?-3.1 A、-250 V、RDS(on) = 2.1? ，需 VGS = -10 V\n?較低的柵極電荷（典型值為 10 nC）\n?較低的 Crss（典型值為 10.3 pF）\n?快速開關(guān)\n?100% 經(jīng)過雪崩擊穿測試;

ONSEMI

安森美半導(dǎo)體

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：579.23 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

250V P-Channel MOSFET

文件：586.34 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

文件：568.68 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體