500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and w

文件：766.8 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，P 溝道，QFET?，-500 V，-2.1 A，4.9 ?，DPAK

該 P 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?-2.1 A, -500 V, RDS(on)= 4.9 Ω（最大值）（VGS = 10 V 且 ID = -1.05 A 時）柵極電荷低（典型值：18nC）\n?低 Crss（典型值9.5pF）\n?100% 經(jīng)過雪崩擊穿測試\n?100% avalanche tested;

ONSEMI

安森美半導(dǎo)體

500V P-Channel MOSFET

這些P溝道增強模式功率場效應(yīng)晶體管采用飛兆專有的平面條形DMOS技術(shù)生產(chǎn)。這一先進(jìn)技術(shù)是專為最大限度地降低通態(tài)電阻，提供卓越開關(guān)性能，以及在雪崩和交換模式下承受高能量脈沖而定制的。 這些器件非常適合基于互補半橋的電子燈鎮(zhèn)流器。 ? - 2.1A，-500V，RDS(on) = 4.9? @VGS = -10 V\n?低柵極電荷（典型值18 nC）\n?低Crss（典型值9.5pF）\n?快速開關(guān)\n?100%經(jīng)過雪崩測試\n?可提高dv/dt處理能力\n?符合AEC Q101\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：645.58 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

500V P-Channel MOSFET

文件：651.06 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

500V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：640.4 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體