isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.0135Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：287.81 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel Logic Level PWM Optimized Power MOSFET

文件：238.51 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

N-Channel Logic Level PWM Optimized Power MOSFET

ONSEMI

安森美半導(dǎo)體

N-Channel Logic Level MOSFETs 30V, 30A, 0.023ohm

General Description This device employs advanced MOSFET technology and features low gate charge while maintaining low on resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. F

文件：124.13 Kbytes 頁數(shù)：11 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=40.3A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.019Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：305.93 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

30V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features ? 60A, 30V. RDS(on)= 0.0135?@VGS= 10 V ? Low gate charge ( typical 18.5 nC) ? Low Crss ( typical 155 pF) ? Fa

文件：651.43 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體