60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：988.34 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=-47A@ TC=25℃ ·Drain Source Voltage -VDSS=-60V(Min) ·Static Drain-Source On-Resistance -RDS(on) =26mΩ(Max)@VGS= -10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：345.53 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，P 溝道，QFET?，-60 V，-47 A，26 m?，D2PAK

該 P 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)模式電源、音頻放大器、直流電機(jī)控制和可變開關(guān)電源應(yīng)用。 ?-47A, -60V, RDS(on)= 26mΩ（最大值）@VGS = -10 V, ID = -23.5A柵極電荷低（典型值：84nC)\n?低 Crss（典型值320pF)\n?100% 經(jīng)過雪崩擊穿測試\n?175°C最大結(jié)溫額定值\"\n? 175°C maximum junction temperature rating;

ONSEMI

安森美半導(dǎo)體

60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：988.34 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

60V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：714.01 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

-60V P-Channel MOSFET

Features ID= - 47A VDS (V) = -60V RDS(on)= 26 m (V GS = -10V) Low Gate Charge (Typ. 84 nC) Low Crss (Typ. 320 pF) 100 Avalanche Tested 175°C Maximum Junction Temperature Rating

文件：521.22 Kbytes 頁數(shù)：8 Pages

UMW

友臺半導(dǎo)體