200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：661.92 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=31A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.080Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：287.91 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，邏輯電平，QFET?，200 V，31 A，80 mΩ，D2PAK

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?31A, 200V, RDS(on)= 75mΩ（最大值）@VGS = 10 V, ID = 15.5A柵極電荷低（典型值：55nC)\n?低 Crss（典型值52pF)\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?低電平柵極驅(qū)動(dòng)要求允許直接從邏輯驅(qū)動(dòng)器進(jìn)行操作\n?符合 RoHS 標(biāo)準(zhǔn)\n?RoHS compliant;

ONSEMI

安森美半導(dǎo)體

200V N-Channel MOSFET

文件：769.68 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：661.92 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

200V N-Channel MOSFET

文件：732.05 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體