200V LOGIC N_Channel MOSFET

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FAIRCHILD

仙童半導體

N-Channel QFET? MOSFET 200 V, 21 A, 140 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

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FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無錫固電

N-Channel QFET? MOSFET 200 V, 21 A, 140 m廓

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

文件：868.47 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

N 溝道 QFET? MOSFET 200V, 21A, 140m?

該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導體的專有平面條形和 DMOS 技術生產(chǎn)。這種先進的 MOSFET 技術已專門定制用來降低導通電阻，并提供卓越的開關性能和較高的雪崩能量強度。這些器件適用于開關電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?21A, 200V, RDS(on)= 140mΩ（最大值）@VGS = 10 V, ID = 10.5A柵極電荷低（典型值：27nC)\n?低 Crss（典型值30pF)\n?100% 經(jīng)過雪崩擊穿測試\n?低電平柵極驅動要求允許直接從邏輯驅動器進行操作\n?Low level gate drive requirement allowing direct operation from logic drivers;

ONSEMI

安森美半導體