600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：633.85 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=23.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.24Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：363.3 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

功率 MOSFET，N 溝道，QFET?，600V，23.5A，240 m?，TO-3P

該 N 溝道增強型功率 MOSFET 產(chǎn)品采用飛兆半導體的專有平面條形和 DMOS 技術生產(chǎn)。這種先進的 MOSFET 技術已專門定制用來降低導通電阻，并提供卓越的開關性能和較高的雪崩能量強度。這些器件適用于開關電源、有源功率因數(shù)校正（PFC）及照明燈電子鎮(zhèn)流器。 ?23.5A, 600V, RDS(on)= 240mΩ（最大值）@VGS = 10 V, ID = 11.8A柵極電荷低（典型值：110nC)\n?低 Crss（典型值56pF)\n?100% 經(jīng)過雪崩擊穿測試\n?100% avalanche tested;

ONSEMI

安森美半導體

N-Channel MOSFET Transistor

? DESCRIPTION ? Ultra low gate charge ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on) ≤0.185? ? Enhancement mode ? Fast Switching Speed ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：338.98 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

N-Channel MOSFET Transistor

? DESCRITION ? High peak current capability ? FEATURES ? Static drain-source on-resistance: RDS(on)≤185m? ? Enhancement mode: ? 100 avalanche tested ? Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.35 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

isc N-Channel MOSFET Transistor

文件：299.61 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電