isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=170A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.6mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：363.03 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

60V N-Channel MOSFET

文件：650.39 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

功率 MOSFET，N 溝道，QFET?，60 V，170 A，5.6 m?，TO-3P

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)模式電源、音頻放大器、直流電機(jī)控制和可變開關(guān)電源應(yīng)用。 ?170A, 60V, RDS(on)= 5.6mΩ（最大值）@VGS = 10 V, ID = 85A柵極電荷低（典型值：220nC)\n?低 Crss（典型值620pF)\n?100% 經(jīng)過雪崩擊穿測試\n?175°C最大結(jié)溫額定值\n?175°C maximum junction temperature rating;

ONSEMI

安森美半導(dǎo)體

60V N-Ch Power MOSFET

Feature ◇ High Speed Power Switching,Logic Level ◇ Enhanced Body diode dv/dt capability ◇ Enhanced Avalanche Ruggedness ◇ 100% UIS Tested, 100% Rg Tested ◇ Lead Free, Halogen Free Application ◇ Synchronous Rectification in SMPS ◇ Hard Switching and High Speed Circuit ◇ DC/DC in Te

文件：831.63 Kbytes 頁數(shù)：6 Pages

HUNTECK

恒泰柯半導(dǎo)體

N-Channel Power MOSFET

文件：425.46 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 170A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.3mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：344.78 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電