100V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

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FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=140A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.01Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

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ISC

無(wú)錫固電

功率 MOSFET，N 溝道，QFET?，100V，140A，10m?，TO-3P

該 N 溝道增強(qiáng)型功率 MOSFET 產(chǎn)品采用飛兆半導(dǎo)體的專有平面條形和 DMOS 技術(shù)生產(chǎn)。這種先進(jìn)的 MOSFET 技術(shù)已專門定制用來(lái)降低導(dǎo)通電阻，并提供卓越的開關(guān)性能和較高的雪崩能量強(qiáng)度。這些器件適用于開關(guān)模式電源、音頻放大器、直流電機(jī)控制和可變開關(guān)電源應(yīng)用。 ?140A, 100V, RDS(on)= 10mΩ（最大值）@VGS = 10 V, ID = 70A柵極電荷低（典型值：220nC)\n?低 Crss（典型值470pF)\n?100% 經(jīng)過雪崩擊穿測(cè)試\n?175°C最大結(jié)溫額定值\n?175°C maximum junction temperature rating;

ONSEMI

安森美半導(dǎo)體

100V N-Channel MOSFET

文件：679.96 Kbytes 頁(yè)數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=140A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.01Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

無(wú)錫固電

PolarHV HiPerFET Power MOSFETs

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IXYS

艾賽斯