Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package

The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half?pitch, mini?flat, 4?pin package. The lead pitch is 1.27 mm. Features ? Current Transfer Ratio Ranges from 80 to 600 at IF = 5 mA, VCE = 5 V, TA = 25°C ? FODM291A

文件：507.56 Kbytes 頁數(shù)：8 Pages

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6-Pin DIP Package Phototransistor Output Optocoupler

The general purpose optocouplers consist of a galliumarsenide infrared emitting diode driving a silicon phototransistorin a 6-pin dual in-line package. ? Safety and Regulatory Approvals:UL1577, 5,000 VACRMS for 1 MinuteDIN?EN/IEC60747?5?5, 850 V Peak Working Insulation Voltage (Pending)\n? Meets industry standards\n? Current Transfer Ratio Ranges from 80 to 600% at IF = 5 mA, VCE = 5 V, TA = 25°CFODM291A ? 80 to 160%FODM291B ? 130 to 260

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安森美半導(dǎo)體

Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package

The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half?pitch, mini?flat, 4?pin package. The lead pitch is 1.27 mm. Features ? Current Transfer Ratio Ranges from 80 to 600 at IF = 5 mA, VCE = 5 V, TA = 25°C ? FODM291A

文件：507.56 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package

The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half?pitch, mini?flat, 4?pin package. The lead pitch is 1.27 mm. Features ? Current Transfer Ratio Ranges from 80 to 600 at IF = 5 mA, VCE = 5 V, TA = 25°C ? FODM291A

文件：507.56 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package

The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half?pitch, mini?flat, 4?pin package. The lead pitch is 1.27 mm. Features ? Current Transfer Ratio Ranges from 80 to 600 at IF = 5 mA, VCE = 5 V, TA = 25°C ? FODM291A

文件：507.56 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

Single Channel, DC Sensing Input, Phototransistor Optocoupler In Half-Pitch Mini-Flat 4-Pin Package

The FODM291 series consist of a gallium arsenide infrared emitting diode driving a phototransistor. It built in a compact, half?pitch, mini?flat, 4?pin package. The lead pitch is 1.27 mm. Features ? Current Transfer Ratio Ranges from 80 to 600 at IF = 5 mA, VCE = 5 V, TA = 25°C ? FODM291A

文件：507.56 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體