4-Pin DIP Phototransistor Optocouplers

Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4?pin dual in?line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon

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ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/817/marking.html">817；Package：SMT4-Pin；4-Pin DIP Phototransistor Optocouplers

Features ? AC Input Response (FOD814) ? Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% ? Minimum BVCEO of 70 V Guaranteed ? Safety and Regulatory

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ONSEMI

安森美半導(dǎo)體

4-Pin DIP Phototransistor Optocouplers

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ONSEMI

安森美半導(dǎo)體

17 SXGA Industrial Monitor with Resistive Touch Control, Direct VGA, DP Ports, and 304 Stainless Steel Front Bezel

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ADVANTECH

研華科技

NPN EPITAXIAL PLANAR TRANSISTOR

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GTM

勤益投資控股

The GBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages.

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ETL

亞歷電子