4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

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4-Pin DIP Phototransistor Optocouplers

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安森美半導體

4-Pin DIP Phototransistor Optocouplers

Introduction or Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4?pin dual in?line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon

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ONSEMI

安森美半導體

4-Pin DIP Phototransistor Optocouplers

Features ? AC Input Response (FOD814) ? Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% ? Minimum BVCEO of 70 V Guaranteed ? Safety and Regulatory

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ONSEMI

安森美半導體