4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

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4-Pin Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

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4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

文件：723.31 Kbytes 頁數(shù)：12 Pages

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4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

文件：723.31 Kbytes 頁數(shù)：12 Pages

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4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

文件：723.31 Kbytes 頁數(shù)：12 Pages

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4-Pin DIP Phototransistor Optocouplers

Features ? AC Input Response (FOD814) ? Current Transfer Ratio in Selected Groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% ? Minimum BVCEO of 70 V Guaranteed ? Safety and Regulatory

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4-Pin DIP Phototransistor Optocouplers

文件：534.11 Kbytes 頁數(shù)：12 Pages

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4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

文件：723.31 Kbytes 頁數(shù)：12 Pages

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4-Pin High Operating Temperature Phototransistor Optocouplers

Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor

文件：723.31 Kbytes 頁數(shù)：12 Pages

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4 引腳 DIP 光電晶體管光耦合器

FOD814 包含兩個反向并聯(lián)的砷化鎵紅外線發(fā)光二極管，該二極管驅(qū)動 4 引腳雙列直插封裝中的硅光電晶體管輸出。 FOD817 系列包含砷化鎵紅外線發(fā)光二極管，該二極管驅(qū)動 4 引腳雙列直插封裝中的硅光電晶體管。 ? AC 輸入響應 (FOD814)\n? 選擇組中的電流傳輸比：\n? FOD814： 20-300%\n? FOD814A： 50-150%\n? FOD814： 50-600%\n? FOD817A： 80-160%\n? FOD817B： 130-260%\n? FOD817C： 200-400%\n? FOD817D： 300-600%\n? 保證最低 70 V 的 BVCEO\n? 安全和法規(guī)認證\n? UL1577，5000 VACRMS 持續(xù) 1 分鐘\n? DIN EN/IEC60747-5-5;

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