3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers

Features ■ FOD060L in SO8 and FOD260L in 8-pin DIP ■ Very high speed – 10 MBit/s ■ Superior CMR — 50 kV/μs at 1,000V peak ■ Fan-out of 8 over -40°C to +85°C ■ Logic gate output ■ Strobable output ■ Wired OR-open collector ■ Safety and regulatory approvals – UL1577 – DIN EN/IEC 60747-5-2

文件：890.65 Kbytes 頁數(shù)：20 Pages

ONSEMI

安森美半導(dǎo)體

3.3V/5V High Speed-10 MBit/s Logic Gate Optocouplers

Features ■ FOD060L in SO8 and FOD260L in 8-pin DIP ■ Very high speed – 10 MBit/s ■ Superior CMR — 50 kV/μs at 1,000V peak ■ Fan-out of 8 over -40°C to +85°C ■ Logic gate output ■ Strobable output ■ Wired OR-open collector ■ Safety and regulatory approvals – UL1577 – DIN EN/IEC 60747-5-2

文件：890.65 Kbytes 頁數(shù)：20 Pages

ONSEMI

安森美半導(dǎo)體

31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：49.09 Kbytes 頁數(shù)：6 Pages

INTERSIL

31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs

Description The Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25m?. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness r

文件：49.09 Kbytes 頁數(shù)：6 Pages

INTERSIL