isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.52Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.95 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.5Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC conv

文件：333.22 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=12A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.6 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.58Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：332.92 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=13A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.58Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.43 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.03 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.38Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.18 Kbytes 頁數(shù)：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=16A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.47Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

文件：333.18 Kbytes 頁數(shù)：2 Pages

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Ku, K-Band Poewr GaAs Modules

FEATURES High Output Power: P1dB = 18dBm(Typ,) High Gain: G1dqB = 14.5dB(Typ,) Low In/Out VSWR Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 5082 Hermetically Sealed Package (12 X 15 X 3.5mmi)

文件：122.7 Kbytes 頁數(shù)：2 Pages

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KU,K-Band Poewr GaAs Modules

FEATURE *High Output Power: P1dB = 12dBm(Typ,) *High Gain: G1dB = 13.5dB(Typ,) *Low In/Out VSWR *Low Noise; NF = 2.5dB (Typ,) *Broad Band: 18.7 ~ 19.7GHz * Impedance Matched Zin/Zout = 508 *Hermetically Sealed Package (12 X 15 X 3.5mmi)

文件：117.42 Kbytes 頁數(shù)：2 Pages

FUJITSU

富士通