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          首頁(yè) >FMB>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          FMBL1G300US60

          Molding Type Module

          General Description Fairchild’s Insulated Gate Bipolar Transistor (IGBT) power modules provide low conduction and switching losses as well as short circuit ruggedness. They are designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short ci

          文件:693.03 Kbytes 頁(yè)數(shù):9 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FMBS549

          PNP Low Saturation Transistor

          Features ? ThIs device is designed with high current gain and low saturation voltage with collector currents up to 2A continous. ? Sourced from process PB.

          文件:204.97 Kbytes 頁(yè)數(shù):6 Pages

          FAIRCHILD

          仙童半導(dǎo)體

          FMBSS84

          50V P-Channel Enhancement Mode Power MOSFET

          Features ? Low on-resistance RDS(ON) = 10Ω ? Low input capacitance : 30pF ? Fast switching speed : 2.5ns ? Low output capacitance : 10pF ? Low threshole : 2.0V ? In compliance with EU RoHS 2002/95/EC directives ? Suffix -H indicates Halogen-free part, ex.FMBSS84-H Case : Molded plastic, S

          文件:101.75 Kbytes 頁(yè)數(shù):8 Pages

          FORMOSA

          美麗微半導(dǎo)體

          FMBT1015

          PNP Epitaxial Planar Transistor Collector - Emitter Voltage VCEO

          PNP Epitaxial Planar Transistor

          文件:70.45 Kbytes 頁(yè)數(shù):2 Pages

          FCI

          富加宜

          FMBT1815

          NPN Epitaxial Planar Transistor Collector - Emitter Voltage VCEO

          NPN Epitaxial Planar Transistor

          文件:69.11 Kbytes 頁(yè)數(shù):2 Pages

          FCI

          富加宜

          FMBT2222

          600mA Silicon NPN Epitaxial Planar Transistor

          600mA Silicon NPN Epitaxial Planar Transistor Features ? High collector-emitterbreakdien voltage. (BVCEO = 40V@IC =10mA) ? Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector curren

          文件:601.37 Kbytes 頁(yè)數(shù):9 Pages

          FORMOSA

          美麗微半導(dǎo)體

          FMBT2222A

          SMD NPN Transistor

          600mA Silicon NPN Epitaxial Planar Transistor Features ? High collector-emitterbreakdien voltage. (BVCEO = 40V@IC =10mA) ? Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector curren

          文件:434.78 Kbytes 頁(yè)數(shù):9 Pages

          FORMOSA

          美麗微半導(dǎo)體

          FMBT2222A

          FMBT2222A NPN Bipolar Transistor Epitaxial planar die construction

          FEATURES ? Epitaxial planar die construction ? Complementary PNP Type available(FMMBT2907A) MARKING: 1P MAXIMUM RATINGS* TA=25℃ unless otherwise noted

          文件:715.37 Kbytes 頁(yè)數(shù):3 Pages

          FCI

          富加宜

          FMBT2222A

          600mA Silicon NPN Epitaxial Planar Transistor

          600mA Silicon NPN Epitaxial Planar Transistor Features ? High collector-emitterbreakdien voltage. (BVCEO = 40V@IC =10mA) ? Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector curren

          文件:601.37 Kbytes 頁(yè)數(shù):9 Pages

          FORMOSA

          美麗微半導(dǎo)體

          FMBT2222ADW1

          Dual NPN Epitaxial Planar Transistor

          600mA Silicon NPN Epitaxial Planar Transistor Features ? High collector-emitterbreakdien voltage. (BVCEO = 40V@IC=10mA) ? Small load switch transistor with high gain and low stauration voltage, is designed for general purpose amflifier and switching applications at collector current

          文件:130.24 Kbytes 頁(yè)數(shù):10 Pages

          FORMOSA

          美麗微半導(dǎo)體

          技術(shù)參數(shù)

          • 額定電壓:

            300~1400VAC

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          812
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          更多FMB供應(yīng)商 更新時(shí)間2026-1-19 18:35:00
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