1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A

Reverse Voltage - 100 to 1000 V Forward Current - 1A FEATURES ? High current capability ? Low forward voltage drop ? Glass Passivated Chip Junction ? Low power loss, high efficiency ? Lead free in comply with EU RoHS 2011/65/EU directives

文件：494.43 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A

Reverse Voltage - 100 to 1000 V Forward Current - 1A FEATURES ◆ High current capability ◆ Low forward voltage drop ◆ Glass Passivated Chip Junction ◆ Low power loss, high efficiency ◆ Lead free in comply with EU RoHS 2011/65/EU directives

文件：497.6 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI FMB150 is Designed for FEATURES: ? Omnigold? Metalization System

文件：18 Kbytes 頁數(shù)：1 Pages

ASI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI FMB175 is Designed for Class C, FM Broadcast Applications up to 108 MHz. FEATURES: ? Class C Operation ? PG = 10 dB at 175 W/108 MHz ? Omnigold? Metalization System

文件：17.9 Kbytes 頁數(shù)：1 Pages

ASI

1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A

Reverse Voltage - 100 to 1000 V Forward Current - 1A FEATURES ? High current capability ? Low forward voltage drop ? Glass Passivated Chip Junction ? Low power loss, high efficiency ? Lead free in comply with EU RoHS 2011/65/EU directives

文件：494.43 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

1A SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIER Reverse Voltage - 100 to 1000 V Forward Current - 1A

Reverse Voltage - 100 to 1000 V Forward Current - 1A FEATURES ◆ High current capability ◆ Low forward voltage drop ◆ Glass Passivated Chip Junction ◆ Low power loss, high efficiency ◆ Lead free in comply with EU RoHS 2011/65/EU directives

文件：497.6 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

PNP Multi-Chip General Purpose Amplifier

PNP Multi-Chip General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 68.

文件：50.44 Kbytes 頁數(shù)：4 Pages

FAIRCHILD

仙童半導(dǎo)體

Schottky Barrier Diodes

Scope The present specifications shall apply to an FMW-24H. Outline High Frequency Rectification Type Silicon Schottky Barrier Diode Structure Resin Molded Applications High Frequency Rectification Flammability UL94V-0(Equivalent)

文件：85.22 Kbytes 頁數(shù)：3 Pages

SANKEN

三墾

NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package

NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This complementary dual device was designed for use as a medium power amplifier and switch requiring collector currents up to 300mA. Sourced from Pr19 (NPN) and Pr63 (PNP).

文件：28.98 Kbytes 頁數(shù)：2 Pages

FAIRCHILD

仙童半導(dǎo)體

NPN & PNP General Purpose Amplifier

NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19 and 63. See FFB2222A (NPN) and FFB2907A (PNP) for characteristics.

文件：43.6 Kbytes 頁數(shù)：3 Pages

FAIRCHILD

仙童半導(dǎo)體