高精度定位模塊

FM660-RTK 是飛納自主開發(fā)的一款高精度定位模塊，采用17x22 毫米的主流封裝方式，支持北斗三代信號解算，可在遮擋環(huán)境下提供持續(xù)定位，廣泛適用于智能駕駛、無人機、機器人、V2X 車、形變監(jiān)測等領域。 ? 厘米級高精度 RTK 定位\r\n? 17 x 22mm 封裝，兼容主流同類型 GNSS 模塊\r\n? 超低功耗設計\r\n? 支持單系統(tǒng)獨立定位和多系統(tǒng)聯(lián)合定位 , 支持北斗三代信號解算\r\n? 高靈敏度，支持弱信號穩(wěn)定跟蹤\r\n? 支持窄帶抗干擾，在復雜環(huán)境下表現(xiàn)更優(yōu);

Femtomes

飛納經緯

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant EpoxyMolding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

文件：80.61 Kbytes 頁數(shù)：2 Pages

FORMOSA

美麗微半導體

PNP Low Saturation Transistor

PNP Low Saturation Transistor ? These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. ? Sourced from process PA.

文件：57.3 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體

PNP Low Saturation Transistor

PNP Low Saturation Transistor ? These devices are designed for high current gain and low saturation voltage with collector currents up to 3.0A continuous. ? Sourced from process PA.

文件：57.3 Kbytes 頁數(shù)：5 Pages

FAIRCHILD

仙童半導體