SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability * High surge capabitity * High reliability * P/N suffix V means AEC-Q 101 qualified, e.g:FM120V * P/N suffix V means Halogen-free

文件：269.45 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國(guó)際

Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

文件：68.87 Kbytes 頁數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Features Plastic package has Underwrit ers Laboratory Flammability Classification 94V -O Ut iliz ing Flame Retardant Epox y M olding Compound. For surfac e mounted applications. Ex ceeds environmental standards of M IL-S- 19500 / 228 Low leakage current .

文件：71.15 Kbytes 頁數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體

1.0A Surface Mount Schottky Barrier Rectifiers - 20V-200V

Features ?Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. ?Low profile surface mounted application in order to optimize board space. ?Low power loss, high efficiency. ?High current capability, low forward voltage drop.

文件：910.12 Kbytes 頁數(shù)：5 Pages

CHENDA

辰達(dá)半導(dǎo)體

Schottky Diodes

分立

Rectron

麗正國(guó)際

256Kb Bytewide 5V F-RAM Memory

Description The FM1808B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. Features 256Kbit Ferroelectric Nonvolatile RAM ? Organized as 32,768 x 8 bits ? High E

文件：336.12 Kbytes 頁數(shù)：12 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

256Kb Bytewide 5V F-RAM Memory

Description The FM1808B is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile but operates in other respects as a RAM. Features 256Kbit Ferroelectric Nonvolatile RAM ? Organized as 32,768 x 8 bits ? High E

文件：336.12 Kbytes 頁數(shù)：12 Pages

CYPRESSCypress Semiconductor

賽普拉斯賽普拉斯半導(dǎo)體公司

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 200 Volts CURRENT 1.0 Ampere

FEATURES * Low switching noise * Low forward voltage drop * High current capability * High switching capability * High surge capabitity * High reliability * P/N suffix V means AEC-Q 101 qualified, e.g:FM120BV * P/N suffix V means Halogen-free

文件：286.28 Kbytes 頁數(shù)：6 Pages

RECTRON

麗正國(guó)際

Chip Schottky Barrier Diodes - Silicon epitaxial planer type

Silicon epitaxial planer type Features Plastic package has Underwriters Laboratory FlammabilityClassification 94V-O Utilizing Flame Retardant Epoxy Molding Compound. For surface mounted applications. Exceeds environmental standards of MIL-S-19500 / 228 Low leakage current.

文件：72.19 Kbytes 頁數(shù)：2 Pages

FORMOSA

美麗微半導(dǎo)體

SILICON EPITAXIAL PLANCE TYPE

FEATURES ? Plastic package has Underwriters Laboratory ? Flammability classification 94V-0 Utilizing Fame ? Retardant Epoxy Molding Compound ? For surface mount applications ? Exceeds environmental standards of MIL-S-19500/228 ? Low leakage current.

文件：130.28 Kbytes 頁數(shù)：2 Pages

PACELEADER

霈峰