絲?。?strong>FLL；Package：SOD-123FL；Silicon Planar Zener Diodes

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SKTECHNOLGYSHIKE Electronics

時(shí)科廣東時(shí)科微實(shí)業(yè)有限公司

絲印：FLL；Package：SOD123FL；Silicon Planar Zener Diodes

文件：385.89 Kbytes 頁數(shù)：3 Pages

YFWDIODE

佑風(fēng)微

絲?。?strong>FLL；Silicon Planar Zener Diodes

文件：502.33 Kbytes 頁數(shù)：3 Pages

JUXING

廣東鉅興電子

L-Band Medium & High Power GaAs FET

DESCRIPTION The FLL107ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make them ideally suited for base stat

文件：83.16 Kbytes 頁數(shù)：4 Pages

EUDYNA

High Voltage - High Power GaAs FET

DESCRIPTION The FLL21E004ME is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is targeted for high voltage, low current operation in digitally modulated amplification. This product is ideal

文件：252.26 Kbytes 頁數(shù)：6 Pages

EUDYNA

High Voltage - High Power GaAs FET

DESCRIPTION The FLL21E040IK is a high power GaAs FET that offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers. This device is target for high voltage, low current operation in digitally modulated base station amplifiers. This product

文件：371.77 Kbytes 頁數(shù)：6 Pages

EUDYNA

L-band medium & high power gaas FTEs

DESCRIPTION The FLL351ME is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. FEATURES ? High Output Power: P1dB=35.5dBm (Typ.) ? High Gain: G1dB-11.5dB (Typ.) ? High PAE: ηadd=46

文件：210.7 Kbytes 頁數(shù)：4 Pages

FUJITSU

富士通

L-Band High Power GaAs FET

DESCRIPTION The FLL410IK-3C is a partially matched 40 Watt GaAs FET that is designed for use in 2.5 – 2.7 GHz band amplifiers. This new product is uniquely suited for use in MMDS applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.

文件：246.13 Kbytes 頁數(shù)：6 Pages

EUDYNA

L-Band High Power GaAs FET

DESCRIPTION The FLL410IK-4C is a partially matched 40 Watt GaAs FET that is designed for use in 3.4 – 3.7 GHz band amplifiers. This new product is uniquely suited for use in WLL applications as it offers excellent linearity, high efficiency, high gain, long term reliability and ease of use.

文件：248.7 Kbytes 頁數(shù)：6 Pages

FUJITSU

富士通

SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR

SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR PART MARKING DETAIL - D58

文件：111.16 Kbytes 頁數(shù)：2 Pages

ZETEX