High Voltage Fast Switching NPN Power Transistor

Features ? Built-in Diode between Collector and Emitter ? Suitable for Electronic Ballast and Switch Mode Power Supplies

文件：164.82 Kbytes 頁數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

High-Voltage Fast-Switching NPN Power Transistor

Features ? Built-in Diode between Collector and Emitter ? Suitable for Electronic Ballast and Switch-Mode Power Supplies

文件：374.98 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

isc Silicon NPN Power Transistor

DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO= 400V(Min.) ·High Reliability ·Low Collector Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driv

文件：307.1 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

絲?。?a target="_blank" title="Marking" href="/j3307d/marking.html">J3307D；Package：D-PAK；High-Voltage Fast-Switching NPN Power Transistor

Features ? Built-in Diode between Collector and Emitter ? Suitable for Electronic Ballast and Switch-Mode Power Supplies

文件：374.98 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

FJB3307D: High Voltage Fast Switching NPN Power Transistor

FJB3307D是一款700 V 8 A NPN硅外延平面晶體管。 FJB3307D設(shè)計用于高速開關(guān)應(yīng)用，采用業(yè)界標(biāo)準(zhǔn)的表面貼裝TO-263 (D2PAK)封裝，提供設(shè)計靈活性以及出色的功耗性能。 高電壓能力\n 高開關(guān)速度\n 寬安全工作范圍\n 集電極和發(fā)射極之間內(nèi)置二極管;

ONSEMI

安森美半導(dǎo)體

Package：TO-263-3，D2Pak（2 引線 + 接片），TO-263AB；包裝：剪切帶（CT）帶盒（TB） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - 雙極性晶體管（BJT）- 單個 描述：TRANS NPN 400V 8A D2PAK

ONSEMI

安森美半導(dǎo)體