GaAs FET & HEMT Chips

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EUDYNA

Super Low Noise HEMT

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EUDYNA

High Efficiency

Surge

GaAs HEMTs

The FHX04X, FHX05X, FHX06X are High Electron Mobility Transistors (HEMT) intended for general purpose, low noise and high gain amplifiers in the 2-18GHz frequency range. The devices are well suited for telecommunication, DBS, TVRO, VSAT or other low noise applications. Sumitomo Electric's stringent ? Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04)\n? High Associated Gain: 10.5dB (Typ.)@f=12GHz\n? Lg ≤ 0.25μm, Wg = 200μm\n? Gold Gate Metallization for High Reliability;

SUMITOMO

住友商事

Super Low Noise HEMT

Fujitsu

富士通

包裝：散裝 類別：連接器，互連器件 圓形連接器組件 描述：CONN PLUG MALE 4P GOLD SLDR CUP

LEMO

雷莫

包裝：散裝 類別：連接器，互連器件 圓形連接器組件 描述：CONN PLUG MALE 5P GOLD SLDR CUP

LEMO

雷莫

包裝：散裝 類別：連接器，互連器件 圓形連接器組件 描述：CONN PLUG MALE 9P GOLD SLDR CUP

LEMO

雷莫