600V, 7A Low Saturation IGBT CO-PAK

Description Fairchilds Insulated Gate Bipolar Transistors (IGBTs) provides very low conduction and switching losses.The device is designed for Lamp applications where very low On-Voltage Drop is a required feature. Features ? Low saturation voltage : VCE(sat) = 1.4 V @ IC = 7A ? High input imp

文件：791.85 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

600V, 7A Low Saturation IGBT CO-PAK

ONSEMI

安森美半導(dǎo)體

Package：TO-220-3 整包；包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - UGBT、MOSFET - 單 描述：IGBT 600V 14A 45W TO220F

ONSEMI

安森美半導(dǎo)體

600V, 7A RUF IGBT CO-PAK

Description Fairchilds Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. Features ? High speed switching ? Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A ? High in

文件：902.05 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

600V, 7A RUF IGBT CO-PAK

Description Fairchilds Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.The device is designed for Motor applications where ruggedness is a required feature. Features ? High speed switching ? Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A ? High in

文件：902.05 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

文件：4.14763 Mbytes 頁數(shù)：9 Pages

FOSTER

福斯特半導(dǎo)體