絲印：FGH；Package：DO-214AA；Automotive and High Reliability TVS Diodes

文件：1.10451 Mbytes 頁(yè)數(shù)：5 Pages

YINT

音特電子

絲?。?a target="_blank" title="Marking" href="/fgh20n60sfd/marking.html">FGH20N60SFD；Package：TO-247；IGBT - Field Stop 600 V, 20 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features ? High Current Capability ? Low S

文件：812.21 Kbytes 頁(yè)數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fgh20n60sfdtu/marking.html">FGH20N60SFDTU；Package：TO-247；IGBT - Field Stop 600 V, 20 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features ? High Current Capability ? Low S

文件：812.21 Kbytes 頁(yè)數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fgh30s130p/marking.html">FGH30S130P；Package：TO-247；1300 V, 30 A Shorted-anode IGBT

Features ? High Speed Switching ? Low Saturation Voltage: VCE(sat) = 1.75 V @ IC = 30 A ? High Input Impedance ? RoHS Compliant General Description Using advanced field stop trench and shorted-anode technology, Fairchild’s shorted-anode trench IGBTs offer superior conduction and switching

文件：823.84 Kbytes 頁(yè)數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

絲印：FGH40N60SFD；Package：TO-247；IGBT - Field Stop 600 V, 40 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features ? High Current Capability ? Low S

文件：815.57 Kbytes 頁(yè)數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲印：FGH40N60SFDTU；Package：TO-247；IGBT - Field Stop 600 V, 40 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features ? High Current Capability ? Low S

文件：815.57 Kbytes 頁(yè)數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fgh40n60smd/marking.html">FGH40N60SMD；Package：TO-247-3；IGBT - Field Stop 600 V, 40 A

Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features ? Maximum Junction Temperature: TJ

文件：375.39 Kbytes 頁(yè)數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

絲印：FGH40N60UFD；Package：TO-247；IGBT - Field Stop 600 V, 40 A

Description Using novel Field Stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder, microwave oven, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features ? High Current Capability

文件：542.37 Kbytes 頁(yè)數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/fgh40n60uf/marking.html">FGH40N60UF；Package：TO-247；600 V, 40 A Field Stop IGBT

Features ? High Current Capability ? Low Saturation Voltage: VCE(sat) = 1.8 V @ IC = 40 A ? High Input Impedance ? Fast Switching ? RoHS Compliant Applications ? Solar Inverter, UPS, Welder, PFC General Description Using novel field stop IGBT technology, Fairchild’s field stop IGBTs o

文件：635.37 Kbytes 頁(yè)數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲印：FGH40N65UFD；Package：TO-247；IGBT - Field Stop 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential. Features ? High Current Capability ? Low Saturation Volt

文件：478.2 Kbytes 頁(yè)數(shù)：10 Pages

ONSEMI

安森美半導(dǎo)體