600 V，3 A，短路額定 IGBT

飛兆半導(dǎo)體的 NPT IGBT 采用的是先進(jìn)的 NPT IGBT 技術(shù)，為具有低損耗和短路耐用性特征的低功率逆變器驅(qū)動應(yīng)用提供最優(yōu)性能。 ?短路承受額定 10us\n?高電流能力\n?高輸入阻抗\n?快速開關(guān)\n?符合RoHS標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體

Using advanced NPT IGBT technology, Fairchild??? the NPT vIGBTs offer the optimum performance for low-power inverterdriven applications where low-losses and short-circuit ruggedness features are essential.

文件：1.036569 Mbytes 頁數(shù)：10 Pages

FAIRCHILD

仙童半導(dǎo)體

600V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

文件：581.81 Kbytes 頁數(shù)：9 Pages

FAIRCHILD

仙童半導(dǎo)體

This N-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

文件：660.97 Kbytes 頁數(shù)：4 Pages

KERSEMI

600V N-Channel MOSFET

文件：869.48 Kbytes 頁數(shù)：8 Pages

FAIRCHILD

仙童半導(dǎo)體