絲?。?strong>FFSP1065B；Package：TO220；Silicon Carbide Schottky Diode 650 V, 10 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：278.59 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

絲印：FFSP1065B；Package：TO220；Silicon Carbide Schottky Diode 650 V, 10 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：279.43 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

絲?。?strong>FFSP1065B；Package：TO220；Silicon Carbide Schottky Diode 650 V, 10 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：278.59 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體

絲印：FFSP1065B；Package：TO220；Silicon Carbide Schottky Diode 650 V, 10 A

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide

文件：279.43 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導體