絲?。?strong>FFSH3065B；Package：TO-247-2LD；Silicon Carbide Schottky Diode

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絲?。?strong>FFSH3065B；Package：TO-247-2LD；Silicon Carbide Schottky Diode, 650 V, 30 A

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Silicon Carbide (SiC) Schottky Diode – EliteSiC, 30 A, 650 V, D2,?TO-247-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the ? High UIS, Surge Current, and Avalanche\n? 144mJ\n? High Junction Temperature\n? Tj = 175C\n? Low Vf\n? 1.38V\n? No Qrr\n? ;

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Package：TO-247-2；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：SIC DIODE TO247 650V

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Silicon Carbide (SiC) Schottky Diode -?EliteSiC, 30A, 650V, D2, TO-247-2L

Silicon Carbide (SiC) Schottky Diodes use a completely new\ntechnology that provides superior switching performance and\nhigher reliability compared to Silicon. No reverse recovery\ncurrent, temperature independent switching characteristics, and\nexcellent thermal performance sets Silicon Carbide as ? Max Junction Temperature 175C\n? Avalanche Rated 144 mJ\n? High Surge Current Capacity\n? Positive Temperature Coefficient\n? Ease of Paralleling\n? No Reverse Recovery / No Forward Recovery\n? AEC-Q101 Qualified;

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肖特基二極管與整流器 650V 30A SIC SBD

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Package：TO-247-2；包裝：管件 類別：分立半導(dǎo)體產(chǎn)品 二極管 - 整流器 - 單 描述：650V 30A SIC SBD GEN1.5

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