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          首頁(yè) >FF4>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          FF450R17ME4

          Module Adapter Board for EconoDUAL?3 IGBT Modules

          The MA200E12/17 module adapter board offers the following features: ? Dual channel IGBT driver together with 2ED300E17-SFO (detailed description in AN2007-05) and 2ED300C17-S /-ST EiceDRIVER? ? Electrically and mechanically suitable for EconoDual? 3 modules family ? Operating temperature (desi

          文件:1.1058 Mbytes 頁(yè)數(shù):25 Pages

          INFINEON

          英飛凌

          FF450R17ME7_B11

          EconoDUAL?3 module with TRENCHSTOP?IGBT7 and emitter controlled 7 diode and NTC

          Features ? Electrical features - VCES = 1700 V - IC nom = 450 A / ICRM = 900 A - Integrated temperature sensor - High current density - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient - Suitable Infineon gate drivers can b

          文件:916.55 Kbytes 頁(yè)數(shù):17 Pages

          INFINEON

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          FF450R17ME7B11BPSA1

          EconoDUAL?3 module with TRENCHSTOP?IGBT7 and emitter controlled 7 diode and NTC

          Features ? Electrical features - VCES = 1700 V - IC nom = 450 A / ICRM = 900 A - Integrated temperature sensor - High current density - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient - Suitable Infineon gate drivers can b

          文件:916.55 Kbytes 頁(yè)數(shù):17 Pages

          INFINEON

          英飛凌

          FF450R33T3E3

          XHP?? module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

          Features ? Electrical features - VCES = 3300 V - IC nom = 450 A / ICRM = 900 A - Low switching losses - High DC stability - High short-circuit capability - Low VCE,sat - Tvj,op = 150°C - Unbeatable robustness - VCE,sat with positive temperature coefficient ? Mechanical features - AlSiC

          文件:778.56 Kbytes 頁(yè)數(shù):15 Pages

          INFINEON

          英飛凌

          FF450R33T3E3_B5

          XHP?? module with Trench/Fieldstop IGBT3 and emitter controlled 3 diode

          Features ? Electrical features - VCES = 3300 V - IC nom = 450 A / ICRM = 900 A - High DC stability - High short-circuit capability - Low switching losses - Low VCE,sat - Tvj,op = 150°C - Unbeatable robustness ? Mechanical features - AlSiC base plate for increased thermal cycling capabil

          文件:778.5 Kbytes 頁(yè)數(shù):15 Pages

          INFINEON

          英飛凌

          FF450R45T3E4_B5

          XHP?3 module with Trench/Fieldstop IGBT4 and emitter controlled 4 diode

          Features ? Electrical features - VCES = 4500 V - IC nom = 450 A / ICRM = 900 A - High dynamic robustness - Low VCE,sat - Trench IGBT 4 ? Mechanical features - Package with CTI > 600 - AlSiC base plate for increased thermal cycling capability - High creepage and clearance distances - Hou

          文件:722.02 Kbytes 頁(yè)數(shù):15 Pages

          INFINEON

          英飛凌

          FF4MR12W2M1H_B11

          EiceDRIVER? 1ED314xMU12F (1ED-X3 Compact)

          Features ? Single-channel isolated gate driver ? For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs ? Up to 6.5 A typical peak output current ? 45 ns propagation delay with 7 ns part-to-part matching (skew) ? 35 V absolute maximum output supply voltage ? High common-mode

          文件:4.24411 Mbytes 頁(yè)數(shù):34 Pages

          INFINEON

          英飛凌

          FF4MR12W2M1H_B70

          EasyDUAL module with CoolSiC? Trench MOSFET and PressFIT / NTC

          Features ? Electrical features - VDSS = 1200 V - IDN = 200 A / IDRM = 400 A - Low inductive design - Low switching losses - High current density ? Mechanical features - Improved ceramic substrate - Integrated NTC temperature sensor - PressFIT contact technology - Rugged mounting due to

          文件:708.39 Kbytes 頁(yè)數(shù):16 Pages

          INFINEON

          英飛凌

          FF4MR12W2M1HP_B11

          EasyDUAL module with CoolSiC? Trench MOSFET and PressFIT / NTC / TIM

          Features ? Electrical features - VDSS = 1200 V - IDN = 200 A / IDRM = 400 A - Low switching losses - Low inductive design - High current density - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder ? Mechanical features - Rugged mounting due to integrated

          文件:667.78 Kbytes 頁(yè)數(shù):16 Pages

          INFINEON

          英飛凌

          FF4MR20KM1H

          62 mm C-Series module with CoolSiC? Trench MOSFET

          Features ? Electrical features - VDSS = 2000 V - IDN = 300 A / IDRM = 600 A - Low switching losses - High current density ? Mechanical features - 4 kV AC 1 min insulation

          文件:538.27 Kbytes 頁(yè)數(shù):15 Pages

          INFINEON

          英飛凌

          技術(shù)參數(shù)

          • Green:

            yes

          • Halogen-free:

            no

          • Voltage Class:

            600 V

          • Configuration:

            Dual

          • Technology:

            IGBT3 - E3

          • IC(nom) / IF(nom):

            400 A

          • OPN:

            FF400R06KE3HOSA1

          • VCE(sat) Tvj=25°C typ:

            1.45 V

          • VF Tvj=25°C typ:

            1.55 V

          • Qualification:

            Industrial

          • Housing:

            62 mm

          • Dimensions length:

            106.4 mm

          • Dimensions width:

            61.4 mm

          • Package name:

            AG-62MM

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          更多FF4供應(yīng)商 更新時(shí)間2026-1-20 15:01:00
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