Module Adapter Board for EconoDUAL?3 IGBT Modules

The MA200E12/17 module adapter board offers the following features: ? Dual channel IGBT driver together with 2ED300E17-SFO (detailed description in AN2007-05) and 2ED300C17-S /-ST EiceDRIVER? ? Electrically and mechanically suitable for EconoDual? 3 modules family ? Operating temperature (desi

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EconoDUAL?3 module with TRENCHSTOP?IGBT7 and emitter controlled 7 diode and NTC

Features ? Electrical features - VCES = 1700 V - IC nom = 300 A / ICRM = 600 A - Integrated temperature sensor - High current density - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 - VCE,sat with positive temperature coefficient - Suitable Infineon gate drivers can b

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THINKI 40A,200V Matured Planar N-Channel Power MOSFETs

Features ? 40A, 200V, RDS(on) = 0.060Ω @VGS = 10 V ? Low gate charge ( typical 154 nC) ? Low Crss ( typical 101 pF) ? Fast switching ? 100% avalanche tested ? Improved dv/dt capability ? 175°C maximum junction temperature rating

文件：1.29941 Mbytes 頁數(shù)：6 Pages

THINKISEMI

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EasyDUAL module with CoolSiC? Trench MOSFET and PressFIT / NTC

Features ? Electrical features - VDSS = 1200 V - IDN = 25 A / IDRM = 50 A - Low inductive design - Low switching losses ? Mechanical features - Rugged mounting due to integrated mounting clamps - PressFIT contact technology - Integrated NTC temperature sensor Potential applications ?

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EasyDUAL module with CoolSiC? Trench MOSFET and PressFIT / NTC / TIM

Features ? Electrical features - VDSS = 1200 V - IDN = 25 A / IDRM = 50 A - Low inductive design - Low switching losses ? Mechanical features - Rugged mounting due to integrated mounting clamps - PressFIT contact technology - Integrated NTC temperature sensor - Pre-applied thermal interf

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62 mm C-Series module with CoolSiC? Trench MOSFET

Features ? Electrical features - VDSS = 1200 V - IDN = 280 A / IDRM = 560 A - High current density - Low switching losses ? Mechanical features - 4 kV AC 1 min insulation

文件：600.51 Kbytes 頁數(shù)：13 Pages

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62 mm C-Series module with CoolSiC? Trench MOSFET and pre-applied thermal interface material

Features ? Electrical features - VDSS = 1200 V - IDN = 280 A / IDRM = 560 A - High current density - Low switching losses ? Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：624.42 Kbytes 頁數(shù)：13 Pages

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62 mm C-Series module with CoolSiC? Trench MOSFET

Features ? Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density ? Mechanical features - 4 kV AC 1 min insulation

文件：533.75 Kbytes 頁數(shù)：15 Pages

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62 mm C-Series module with CoolSiC? Trench MOSFET

Features ? Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density - Suitable Infineon gate drivers can be found under https://www.infineon.com/gdfinder ? Mechanical features - 4 kV AC 1 min insulation

文件：739.14 Kbytes 頁數(shù)：15 Pages

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62 mm C-Series module with CoolSiC? Trench MOSFET and pre-applied thermal interface material

Features ? Electrical features - VDSS = 2000 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density ? Mechanical features - 4 kV AC 1 min insulation - Pre-applied thermal interface material

文件：715.46 Kbytes 頁數(shù)：15 Pages

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