P-Channel 1.5V PowerTrench? WL-CSP MOSFET

General Description Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art low pitch WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine ex

文件：304.51 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 1.5V PowerTrenchTM WL-CSP MOSFET

General Description Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art low pitch WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine ex

文件：352.32 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

P-Channel 1.5V PowerTrench? WL-CSP MOSFET

General Description Designed on Fairchilds advanced 1.5V PowerTrench process with state of the art low pitch WLCSP packaging process, the FDZ191P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine ex

文件：304.51 Kbytes 頁(yè)數(shù)：7 Pages

FAIRCHILD

仙童半導(dǎo)體

P 溝道，1.5V 指定，PowerTrench? WL-CSP MOSFET，-20V，-1A，85mΩ

FDZ191P的設(shè)計(jì)采用了飛兆先進(jìn)的1.5 V PowerTrench工藝和一流的\"微間距\"WLCSP封裝工藝，可最大限度地減少PCB空間和rDS(on)。 先進(jìn)的WLCSP MOSFET彰顯了封裝技術(shù)的突破性進(jìn)展，使該器件將卓越的傳熱特性、超薄型封裝、低柵極電荷和低rDS(on)融合為一體。 . ?最大rDS(on) = 85mΩ （VGS = -4.5V, ID = -1A）\n?最大 rDS(on) = 123 mΩ（VGS = -2.5 V、ID = -1 A 時(shí)）\n?最大 rDS(on) = 200 mΩ（VGS = -1.5 V、ID = -1 A 時(shí)）\n?僅占1.5mm2的PCB空間，比2 x 2 BGA所占空間少50%\n?超薄封裝： 安裝至PCB時(shí)，高度小于0.65 mm\n?符合 RoHS 標(biāo)準(zhǔn);

ONSEMI

安森美半導(dǎo)體